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 ON Semiconductort
Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N5400 120 130 5.0 600 625 5.0 1.5 12 -55 to +150 2N5401 150 160 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
2N5401*
*ON Semiconductor Preferred Device
1 2 3
CASE 29-11, STYLE 1 TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W 2 BASE
COLLECTOR 3
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min
1 EMITTER Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0, TA = 100C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2N5401 2N5401 IEBO V(BR)CEO 2N5400 2N5401 V(BR)CBO 2N5400 2N5401 V(BR)EBO ICBO -- -- -- 50 50 50 nAdc 160 5.0 -- -- Vdc 150 -- Vdc Vdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2001
1
June, 2001 - Rev. 0
Publication Order Number: 2N5401/D
2N5401
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE 50 60 50 VCE(sat) -- -- VBE(sat) -- -- 1.0 1.0 0.2 0.5 Vdc -- 240 -- Vdc --
SMALL-SIGNAL CHARACTERISTICS
Current-Gain -- Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 250 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. fT 100 Cobo hfe 40 NF -- 200 8.0 dB -- 300 6.0 pF -- MHz
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200 150 h FE, CURRENT GAIN 100 70 50 -55C 30 20 VCE = -1.0 V VCE = -5.0 V 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 100 25C TJ = 125C
Figure 1. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA
Figure 2. Collector Saturation Region
103 IC, COLLECTOR CURRENT ( A) 102 101 100 10-1 10-2 10-3 0.3 TJ = 125C 75C REVERSE 25C FORWARD VCE = 30 V IC = ICES
0.2
0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE-EMITTER VOLTAGE (VOLTS)
0.6
0.7
Figure 3. Collector Cut-Off Region
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0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 V, TEMPERATURE COEFFICIENT (mV/ C) 1.0 TJ = 25C 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.1 VB for VBE(sat) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 VC for VCE(sat) TJ = -55C to 135C
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50
100
Figure 4. "On" Voltages
Figure 5. Temperature Coefficients
10.2 V Vin 10 s INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0%
C, CAPACITANCE (pF)
VBB +8.8 V 100 0.25 F RB 5.1 k Vin 100 1N914
VCC -30 V 3.0 k RC Vout
100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.3 2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) Cibo
TJ = 25C
Cobo
Values Shown are for IC @ 10 mA
10
20
Figure 6. Switching Time Test Circuit
Figure 7. Capacitances
1000 700 500 300 t, TIME (ns) 200 100 70 50 30 20
IC/IB = 10 TJ = 25C
2000 tr @ VCC = 120 V tr @ VCC = 30 V t, TIME (ns) 1000 700 500 300 200 100 70 50 30 100 200 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IC/IB = 10 TJ = 25C tf @ VCC = 30 V ts @ VCC = 120 V tf @ VCC = 120 V
td @ VBE(off) = 1.0 V VCC = 120 V 1.0 2.0 3.0 5.0 10 20 30 50
10 0.2 0.3 0.5
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 8. Turn-On Time
Figure 9. Turn-Off Time
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PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL
A R P L
SEATING PLANE
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 ---
K
XX G H V
1
D J C SECTION X-X N N
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
DIM A B C D G H J K L N P R V
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Notes
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Notes
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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